Specification	KSP43BU

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	200 V

KSP43 Series

NPN Epitaxial Silicon Transistor

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Supplier Device Package	Transistor Type	Package / Case	Mounting Type	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Current - Collector Cutoff (Max) [Max]
ON Semiconductor KSP43BU	200 V	150 °C	TO-92-3	NPN	TO-226-3 TO-92-3	Through Hole	625 mW	500 mV	500 mA	40	50 MHz	100 nA
ON Semiconductor KSP43BU	200 V	150 °C	TO-92-3	NPN	TO-226-3 TO-92-3	Through Hole	625 mW	500 mV	500 mA	40	50 MHz	100 nA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources