Catalog
NPN Epitaxial Silicon Transistor
Key Features
• Collector-Emitter Voltage : VCEO= KSP42: 300V
• Collector-Emitter Voltage : VCEO= KSP43: 200V
• Collector Dissipation : PC= 625mW Amplifier Transistor
NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor
| Part | Voltage - Collector Emitter Breakdown (Max) [Max] | Operating Temperature | Supplier Device Package | Transistor Type | Package / Case | Mounting Type | Power - Max [Max] | Vce Saturation (Max) @ Ib, Ic | Current - Collector (Ic) (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Frequency - Transition | Current - Collector Cutoff (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 200 V | 150 °C | TO-92-3 | NPN | TO-226-3 TO-92-3 | Through Hole | 625 mW | 500 mV | 500 mA | 40 | 50 MHz | 100 nA |
ON Semiconductor | 200 V | 150 °C | TO-92-3 | NPN | TO-226-3 TO-92-3 | Through Hole | 625 mW | 500 mV | 500 mA | 40 | 50 MHz | 100 nA |