Specification	SB80W06T-H

Current - Average Rectified (Io) (per Diode)	4 A
Current - Reverse Leakage @ Vr	100 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Speed	200 mA, 500 ns
Supplier Device Package	TP
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	600 mV

SB80W06T Series

Schottky Barrier Diode, 60V, 8A, Low IR, Monolithic Dual TP Common Cathode

Part	Technology	Mounting Type	Diode Configuration	Package / Case	Voltage - Forward (Vf) (Max) @ If	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package
ON Semiconductor SB80W06T-H	Schottky	Through Hole	1 Pair Common Cathode	IPAK TO-251-3 Short Leads TO-251AA	600 mV	200 mA 500 ns	60 V	100 µA	4 A	150 °C	-55 °C	TP
ON Semiconductor SB80W06T-P-TL-H	Schottky	Surface Mount	1 Pair Common Cathode	DPAK (2 Leads + Tab) SC-63 TO-252-3	600 mV	200 mA 500 ns	60 V	100 µA	4 A	150 °C	-55 °C	TP-FA
ON Semiconductor SB80W06T-TL-H	Schottky	Surface Mount	1 Pair Common Cathode	DPAK (2 Leads + Tab) SC-63 TO-252-3	600 mV	200 mA 500 ns	60 V	100 µA	4 A	150 °C	-55 °C	TP-FA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

SB80W06T Series

SB80W06T is Schottky Barrier Diode, 60V, 8A, Low IR, Monolithic Dual TP Common Cathode for High frequency rectification(switching regulators, converters, choppers).