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TO-252-3
Discrete Semiconductor Products

SB80W06T-P-TL-H

Obsolete
ON Semiconductor

DIODE ARRAY SCHOTT 60V 4A TP-FA

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DocumentsDatasheet
TO-252-3
Discrete Semiconductor Products

SB80W06T-P-TL-H

Obsolete
ON Semiconductor

DIODE ARRAY SCHOTT 60V 4A TP-FA

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSB80W06T-P-TL-H
Current - Average Rectified (Io) (per Diode)4 A
Current - Reverse Leakage @ Vr100 µA
Diode Configuration1 Pair Common Cathode
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Speed200 mA, 500 ns
Supplier Device PackageTP-FA
TechnologySchottky
Voltage - DC Reverse (Vr) (Max) [Max]60 V
Voltage - Forward (Vf) (Max) @ If600 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

SB80W06T Series

SB80W06T is Schottky Barrier Diode, 60V, 8A, Low IR, Monolithic Dual TP Common Cathode for High frequency rectification(switching regulators, converters, choppers).

Documents

Technical documentation and resources