Discrete Semiconductor Products

STP33N60M2

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STMicroelectronics

N-CHANNEL 600 V, 0.108 OHM TYP., 26 A MDMESH M2 POWER MOSFETS IN TO-220 PACKAGE

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Documents AN4742 +25

Discrete Semiconductor Products

STP33N60M2

Active

STMicroelectronics

N-CHANNEL 600 V, 0.108 OHM TYP., 26 A MDMESH M2 POWER MOSFETS IN TO-220 PACKAGE

Deep-Dive with AI

Documents AN4742 +25

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP33N60M2

Current - Continuous Drain (Id) @ 25°C	26 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	45.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1781 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	190 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STP33N60M2 Series

N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-220 package

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STP33N60M2	25 V	26 A	190 W	Through Hole	4 V	MOSFET (Metal Oxide)	TO-220	600 V	TO-220-3	150 °C	-55 °C	10 V	125 mOhm	45.5 nC	N-Channel	1781 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	590	$ 4.79
Newark	Each	1	$ 5.96
		10	$ 5.15
		25	$ 4.33
		50	$ 3.52
		100	$ 3.38
		250	$ 3.18
		500	$ 2.98

Description

General part information

STP33N60M2 Series

These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.