Discrete Semiconductor Products

APT11GP60BDQBG

Obsolete

IGBT 600V 41A 187W TO247

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

IGBT 600V 41A 187W TO247

Technical Specifications

Parameters and characteristics for this part

Specification	APT11GP60BDQBG

Current - Collector (Ic) (Max) [Max]	41 A
Current - Collector Pulsed (Icm)	45 A
Gate Charge	40 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	187 W
Supplier Device Package	TO-247-3
Switching Energy	90 µJ, 46 µJ
Td (on/off) @ 25°C	29 ns
Td (on/off) @ 25°C	7 ns
Test Condition	11 A, 400 V, 5 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	IGBT Type	Current - Collector (Ic) (Max) [Max]	Switching Energy	Test Condition	Vce(on) (Max) @ Vge, Ic	Gate Charge	Td (on/off) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Current - Collector Pulsed (Icm)	Power - Max [Max]	Supplier Device Package	Td (on/off) @ 25°C	Td (on/off) @ 25°C
Microsemi Corporation APT11GF120KRG	TO-220-3	1200 V	NPT	25 A	285 µJ 300 µJ	8 A 10 Ohm 15 V 800 V	3 V	65 nC	7 ns 100 ns	150 °C	-55 °C	Through Hole	44 A	156 W	TO-220 [K]
Microsemi Corporation APT11GF120BRDQ1G	TO-247-3	1200 V	NPT	25 A	285 µJ 300 µJ	8 A 10 Ohm 15 V 800 V	3 V	65 nC	7 ns 100 ns	150 °C	-55 °C	Through Hole		156 W	TO-247 [B]
Microsemi Corporation APT11GP60BDQBG	TO-247-3	600 V	PT	41 A	46 µJ 90 µJ	5 Ohm 11 A 15 V 400 V	2.7 V	40 nC		150 °C	-55 °C	Through Hole	45 A	187 W	TO-247-3	29 ns	7 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 3.73

General part information

IGBT PT 600 V 41 A 187 W Through Hole TO-247-3

Technical documentation and resources