APT11G Series
Manufacturer: Microsemi Corporation
IGBT 1200V 25A 156W TO220
| Part | Package / Case | Voltage - Collector Emitter Breakdown (Max) [Max] | IGBT Type | Current - Collector (Ic) (Max) [Max] | Switching Energy | Test Condition | Vce(on) (Max) @ Vge, Ic | Gate Charge | Td (on/off) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Current - Collector Pulsed (Icm) | Power - Max [Max] | Supplier Device Package | Td (on/off) @ 25°C | Td (on/off) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation | TO-220-3 | 1200 V | NPT | 25 A | 285 µJ 300 µJ | 8 A 10 Ohm 15 V 800 V | 3 V | 65 nC | 7 ns 100 ns | 150 °C | -55 °C | Through Hole | 44 A | 156 W | TO-220 [K] | ||
Microsemi Corporation | TO-247-3 | 1200 V | NPT | 25 A | 285 µJ 300 µJ | 8 A 10 Ohm 15 V 800 V | 3 V | 65 nC | 7 ns 100 ns | 150 °C | -55 °C | Through Hole | 156 W | TO-247 [B] | |||
Microsemi Corporation | TO-247-3 | 600 V | PT | 41 A | 46 µJ 90 µJ | 5 Ohm 11 A 15 V 400 V | 2.7 V | 40 nC | 150 °C | -55 °C | Through Hole | 45 A | 187 W | TO-247-3 | 29 ns | 7 ns |