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TO-18
Discrete Semiconductor Products

MV2N5114

Active
Microchip Technology

JFET TO-18 ROHS COMPLIANT: YES

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Documents2N5114-16
TO-18
Discrete Semiconductor Products

MV2N5114

Active
Microchip Technology

JFET TO-18 ROHS COMPLIANT: YES

Deep-Dive with AI

Documents2N5114-16

Technical Specifications

Parameters and characteristics for this part

SpecificationMV2N5114
Current - Drain (Idss) @ Vds (Vgs=0) [diameter]90 mA
Current - Drain (Idss) @ Vds (Vgs=0) [diameter]18 V
Drain to Source Voltage (Vdss)30 V
FET TypeP-Channel
GradeMilitary
Input Capacitance (Ciss) (Max) @ Vds [Max]25 pF
Mounting TypeThrough Hole
Package / CaseTO-18-3 Metal Can, TO-206AA
Power - Max [Max]500 mW
QualificationMIL-PRF-19500
Resistance - RDS(On)75 Ohms
Supplier Device PackageTO-18
Supplier Device PackageTO-206AA
Voltage - Breakdown (V(BR)GSS)30 V
Voltage - Cutoff (VGS off) @ Id10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 63.96
Microchip DirectN/A 1$ 68.88
NewarkEach 100$ 63.96
500$ 61.51

Description

General part information

MV2N5114-Transistor Series

This family of 2N5114 through 2N5116 JFET P-CH transistors are military screened to JANTXV equivalent for high-reliability applications. These transistors are available in a (TO-18) and surfacemont UB package. Microchip also offers numerous other products to meet higher and lower power voltage regulation applications.

Documents

Technical documentation and resources