Discrete Semiconductor Products

SI9410BDY-T1-GE3

Obsolete

MOSFET N-CH 30V 6.2A 8SO

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 6.2A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI9410BDY-T1-GE3

Current - Continuous Drain (Id) (Ta)	6.2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	23 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	1.5 W
Rds On (Max)	24 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

Part	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Package Name	Technology	Current - Continuous Drain (Id) (Ta)	Rds On (Max)	Package Length	Package Width	FET Type	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)
Vishay Dale SI9410BDY-T1-E3	-55 °C	150 °C	30 V	Surface Mount	8-SOIC	MOSFET (Metal Oxide)	6.2 A	24 mOhm	0.154 in	3.9 mm	N-Channel	20 V	1.5 W	3 V	10 V	4.5 V	23 nC
Vishay Dale SI9410BDY-T1-GE3	-55 °C	150 °C	30 V	Surface Mount	8-SOIC	MOSFET (Metal Oxide)	6.2 A	24 mOhm	0.154 in	3.9 mm	N-Channel	20 V	1.5 W	3 V	10 V	4.5 V	23 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 30 V 6.2A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

Technical documentation and resources

No documents available