SI9410 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 6.2A 8SO
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Current - Continuous Drain (Id) @ 25°C | FET Type | Supplier Device Package | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Drain to Source Voltage (Vdss) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 8-SOIC | 3.9 mm | 0.154 in | 6.2 A | N-Channel | 8-SOIC | 24 mOhm | 4.5 V 10 V | 3 V | 23 nC | 1.5 W | MOSFET (Metal Oxide) | -55 °C | 150 °C | 20 V | 30 V | Surface Mount |
Vishay General Semiconductor - Diodes Division | 8-SOIC | 3.9 mm | 0.154 in | 6.2 A | N-Channel | 8-SOIC | 24 mOhm | 4.5 V 10 V | 3 V | 23 nC | 1.5 W | MOSFET (Metal Oxide) | -55 °C | 150 °C | 20 V | 30 V | Surface Mount |