Discrete Semiconductor Products

SI3493DDV-T1-GE3

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SMALL SIGNAL FIELD-EFFECT TRANSISTOR,

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Discrete Semiconductor Products

Active

SMALL SIGNAL FIELD-EFFECT TRANSISTOR,

Technical Specifications

Parameters and characteristics for this part

Specification	SI3493DDV-T1-GE3

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	1825 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	3.6 W
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs (Max)	Supplier Device Package	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SI3493DV-T1-GE3	27 mOhm	20 V	Surface Mount	1.8 V 4.5 V	-55 °C	150 °C	P-Channel	8 V	6-TSOP	MOSFET (Metal Oxide)	1.1 W	5.3 A	SOT-23-6 Thin TSOT-23-6	32 nC	1 V
Vishay General Semiconductor - Diodes Division SI3493DDV-T1-GE3	24 mOhm	20 V	Surface Mount	1.8 V 4.5 V	-55 °C	150 °C	P-Channel	8 V	6-TSOP	MOSFET (Metal Oxide)	3.6 W	8 A	SOT-23-6 Thin TSOT-23-6		1 V	30 nC	1825 pF

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General part information

P-Channel 20 V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP

Technical documentation and resources