SI3493 Series

Catalog

MOSFET P-CH 20V 5.3A 6TSOP

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs (Max)	Supplier Device Package	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SI3493DV-T1-GE3	27 mOhm	20 V	Surface Mount	1.8 V 4.5 V	-55 °C	150 °C	P-Channel	8 V	6-TSOP	MOSFET (Metal Oxide)	1.1 W	5.3 A	SOT-23-6 Thin TSOT-23-6	32 nC	1 V
Vishay General Semiconductor - Diodes Division SI3493DDV-T1-GE3	24 mOhm	20 V	Surface Mount	1.8 V 4.5 V	-55 °C	150 °C	P-Channel	8 V	6-TSOP	MOSFET (Metal Oxide)	3.6 W	8 A	SOT-23-6 Thin TSOT-23-6		1 V	30 nC	1825 pF