
TC1413NCOA
Active3 A BUF OR INV BASED MOSFET DRIVER, PDSO8, 0.150 INCH, PLASTIC, MS-012, SOIC-8
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TC1413NCOA
Active3 A BUF OR INV BASED MOSFET DRIVER, PDSO8, 0.150 INCH, PLASTIC, MS-012, SOIC-8
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Technical Specifications
Parameters and characteristics for this part
| Specification | TC1413NCOA |
|---|---|
| Channel Type | Single |
| Current - Peak Output (Source, Sink) [custom] | 3 A |
| Current - Peak Output (Source, Sink) [custom] | 3 A |
| Driven Configuration | Low-Side |
| Gate Type | N-Channel, P-Channel MOSFET |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH | 0.8 V, 2 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 1 |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | 0 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Rise / Fall Time (Typ) [custom] | 20 ns |
| Rise / Fall Time (Typ) [custom] | 20 ns |
| Supplier Device Package | 8-SOIC |
| Voltage - Supply [Max] | 16 V |
| Voltage - Supply [Min] | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 400 | $ 1.43 | |
| Microchip Direct | TUBE | 1 | $ 1.89 | |
| 25 | $ 1.57 | |||
| 100 | $ 1.43 | |||
| 1000 | $ 1.17 | |||
| 5000 | $ 1.11 | |||
| 10000 | $ 1.02 | |||
Description
General part information
TC1413N Series
The TC1413/1413N are 3 A CMOS buffer/gate drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5 V of noise spiking of either polarity that occurs on the ground pin. They can accept, without damage or logic upset, up to 500mA of current of either polarity being forced back into their output. All terminals are fully protected against up to 4 kV of electrostatic discharge. As MOSFET gate drivers, the TC1413/1413N can easily switch 1,800 pF gate capacitance in 20 ns with matched rise and fall times, and provide low enough impedance in both the ON and the OFF states to ensure the MOSFET’s intended state will not be affected, even by large transients. The rise and fall time edges are matched to allow driving short-duration inputs with greater output accuracy.
Documents
Technical documentation and resources