Specification	FGH25T120SMD-F155

Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	100 A
Gate Charge	225 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	428 W
Reverse Recovery Time (trr)	60 ns
Supplier Device Package	TO-247-3
Switching Energy	1.74 mJ, 0.56 mJ
Td (on/off) @ 25°C	490 ns, 40 ns
Test Condition	25 A, 15 V, 23 Ohm, 600 V
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

FGH25T120SMD Series

IGBT, 1200V, 25A Field Stop Trench

Part	Operating Temperature [Min]	Operating Temperature [Max]	Test Condition	Td (on/off) @ 25°C	Gate Charge	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Switching Energy	Current - Collector Pulsed (Icm)	Reverse Recovery Time (trr)	Current - Collector (Ic) (Max)	Mounting Type	Supplier Device Package	Package / Case	Vce(on) (Max) @ Vge, Ic	IGBT Type
ON Semiconductor FGH25T120SMD-F155	-55 °C	175 ░C	15 V 23 Ohm 25 A 600 V	40 ns 490 ns	225 nC	428 W	1200 V	0.56 mJ 1.74 mJ	100 A	60 ns	50 A	Through Hole	TO-247-3	TO-247-3	2.4 V	Trench Field Stop

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FGH25T120SMD Series

Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.