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STGB25N40LZAG
Discrete Semiconductor Products

STGB25N40LZAG

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STMicroelectronics

AUTOMOTIVE-GRADE 400 V INTERNALLY CLAMPED IGBT ESCIS 320 MJ

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STGB25N40LZAG
Discrete Semiconductor Products

STGB25N40LZAG

Active
STMicroelectronics

AUTOMOTIVE-GRADE 400 V INTERNALLY CLAMPED IGBT ESCIS 320 MJ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGB25N40LZAG
Current - Collector (Ic) (Max) [Max]25 A
Current - Collector Pulsed (Icm)50 A
Gate Charge26 nC
GradeAutomotive
Input TypeLogic
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power - Max [Max]150 W
QualificationAEC-Q101
Supplier Device PackageTO-263 (D2PAK)
Td (on/off) @ 25°C [custom]4.6 µs
Td (on/off) @ 25°C [custom]1.1 µs
Test Condition5 V, 300 V, 10 A, 1 kOhm
Vce(on) (Max) @ Vge, Ic1.25 V
Voltage - Collector Emitter Breakdown (Max) [Max]435 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1000$ 2.59

Description

General part information

STGB25N40LZAG Series

This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.