Specification	FCP11N60N-F102

Current - Continuous Drain (Id) @ 25°C	10.8 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35.6 nC
Input Capacitance (Ciss) (Max) @ Vds	1505 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	94 W
Rds On (Max) @ Id, Vgs	299 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FCP11N60N Series

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FCP11N60N	35.6 nC	TO-220-3	94 W	1505 pF	N-Channel	10 V	TO-220-3	600 V	-55 °C	150 °C	MOSFET (Metal Oxide)	4 V	10.8 A	30 V	299 mOhm	Through Hole
ON Semiconductor FCP11N60N	35.6 nC	TO-220-3	94 W	1505 pF	N-Channel	10 V	TO-220-3	600 V	-55 °C	150 °C	MOSFET (Metal Oxide)	4 V	10.8 A	30 V	299 mOhm	Through Hole
ON Semiconductor FCP11N60		TO-220-3	125 W	1490 pF	N-Channel	10 V	TO-220-3	600 V	-55 °C	150 °C	MOSFET (Metal Oxide)	5 V	11 A	30 V	380 mOhm	Through Hole	52 nC
ON Semiconductor FCP11N60N-F102	35.6 nC	TO-220-3 Full Pack	94 W	1505 pF	N-Channel	10 V	TO-220F	600 V	-55 °C	150 °C	MOSFET (Metal Oxide)	4 V	10.8 A	30 V	299 mOhm	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FCP11N60N Series

SuperFET® MOSFET is ON Semiconductor Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche energy. Con-sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Documents

Technical documentation and resources

Package Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54P

Package Drawing