FCP11N60N Series
Power MOSFET, N-Channel, SUPERFET<sup>®</sup>, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220
Manufacturer: ON Semiconductor
Catalog
Power MOSFET, N-Channel, SUPERFET<sup>®</sup>, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220
Key Features
• RDS(on)= 255mΩ ( Typ.) @ VGS= 10V, ID= 5.4A
• Ultra low gate charge ( Typ. Qg= 27.4nC )
• Low effective output capacitance ( Typ. Coss.eff = 130pF )
• 100% avalanche tested
• RoHS compliant
Description
AI
SuperFET® MOSFET is ON Semiconductor Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche energy. Con-sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.