Discrete Semiconductor Products

IRFSL9N60APBF

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POWER MOSFET, N CHANNEL, 600 V, 9.2 A, 0.75 OHM, TO-262, THROUGH HOLE

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Discrete Semiconductor Products

Active

POWER MOSFET, N CHANNEL, 600 V, 9.2 A, 0.75 OHM, TO-262, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	IRFSL9N60APBF

Current - Continuous Drain (Id) @ 25°C	9.2 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 V, 49 nC
Input Capacitance (Ciss) (Max) @ Vds	1400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	170 W
Rds On (Max) @ Id, Vgs	750 mOhm
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
Vishay General Semiconductor - Diodes Division IRFSL9N60APBF	N-Channel	750 mOhm	10 V	I2PAK TO-262-3 Long Leads TO-262AA	600 V	MOSFET (Metal Oxide)	I2PAK	10 V 49 nC	-55 °C	150 °C	1400 pF	4 V	Through Hole	170 W	9.2 A	30 V
Vishay General Semiconductor - Diodes Division IRFSL9N60ATRR	N-Channel	750 mOhm	10 V	I2PAK TO-262-3 Long Leads TO-262AA	600 V	MOSFET (Metal Oxide)	I2PAK	10 V 49 nC	-55 °C	150 °C	1400 pF	4 V	Through Hole	170 W	9.2 A	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 9.2A (Tc) 170W (Tc) Through Hole I2PAK

Technical documentation and resources