IRFSL9 Series

Catalog

POWER MOSFET, N CHANNEL, 600 V, 9.2 A, 0.75 OHM, TO-262, THROUGH HOLE

Part	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
Vishay General Semiconductor - Diodes Division IRFSL9N60APBF	N-Channel	750 mOhm	10 V	I2PAK TO-262-3 Long Leads TO-262AA	600 V	MOSFET (Metal Oxide)	I2PAK	10 V 49 nC	-55 °C	150 °C	1400 pF	4 V	Through Hole	170 W	9.2 A	30 V
Vishay General Semiconductor - Diodes Division IRFSL9N60ATRR	N-Channel	750 mOhm	10 V	I2PAK TO-262-3 Long Leads TO-262AA	600 V	MOSFET (Metal Oxide)	I2PAK	10 V 49 nC	-55 °C	150 °C	1400 pF	4 V	Through Hole	170 W	9.2 A	30 V