JAN2N3439P
Active350 V POWER BJT TO-39 ROHS COMPLIANT: YES
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JAN2N3439P
Active350 V POWER BJT TO-39 ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | JAN2N3439P |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 40 |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Power - Max [Max] | 800 mW |
| Qualification | MIL-PRF-19500/368 |
| Supplier Device Package | TO-39 (TO-205AD) |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 350 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 21.52 | |
| Microchip Direct | N/A | 1 | $ 23.17 | |
| Newark | Each | 100 | $ 21.52 | |
| 500 | $ 20.69 | |||
Description
General part information
JAN2N3439P-Transistor-PIND Series
This specification covers the performance requirements for NPN, silicon, low-power, high voltage 2N3439, 2N3439L, 2N3439UA, 2N3439U4, 2N3439UB, 2N3440, 2N3440L, 2N3440UA, 2N3440U4 and 2N3440UB transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device types as specified in MIL-PRF-19500/368 and two levels of product assurance (JANHC and JANKC) for each unencapsulated device type die. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.
Documents
Technical documentation and resources