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RJK03M5DNS-00#J5

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NCH POWER MOSFET 30V 25A 6.3MOHM POWER SON-8 3.3X3.3

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Discrete Semiconductor Products

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NCH POWER MOSFET 30V 25A 6.3MOHM POWER SON-8 3.3X3.3

Technical Specifications

Parameters and characteristics for this part

Specification	RJK03M5DNS-00#J5

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10.4 nC
Input Capacitance (Ciss) (Max) @ Vds	1890 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max) [Max]	15 W
Rds On (Max) @ Id, Vgs	6.3 mOhm
Supplier Device Package	8-HWSON (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Power MOSFET 30V 25A 6.3mohm Power SON-8 3.3x3.3

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case	Operating Temperature	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation RJK03M5DNS-00#J5	Surface Mount	6.3 mOhm	MOSFET (Metal Oxide)	1890 pF	4.5 V 10 V	20 V	8-PowerWDFN	150 °C	N-Channel	8-HWSON (3.3x3.3)	10.4 nC	15 W	25 A	30 V

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General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources