Discrete Semiconductor Products

RJK03M5DPA-00#J5A

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NCH POWER MOSFET 30V 30A 6.5MOHM POWER SON-8 5X6

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Discrete Semiconductor Products

Active

NCH POWER MOSFET 30V 30A 6.5MOHM POWER SON-8 5X6

Technical Specifications

Parameters and characteristics for this part

Specification	RJK03M5DPA-00#J5A

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.4 nC
Input Capacitance (Ciss) (Max) @ Vds	1890 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-WFDFN Exposed Pad
Rds On (Max) @ Id, Vgs	6.5 mOhm
Supplier Device Package	8-WPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Power MOSFET 30V 30A 6.5mohm Power SON-8 5x6

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	FET Type	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature
Renesas Electronics Corporation RJK03M5DNS-00#J5	4.5 V 10 V	25 A	1890 pF	8-HWSON (3.3x3.3)	20 V	10.4 nC	Surface Mount	15 W	30 V	N-Channel	MOSFET (Metal Oxide)	8-PowerWDFN	6.3 mOhm	150 °C
Renesas Electronics Corporation RJK03M5DPA-00#J5A	4.5 V 10 V	30 A	1890 pF	8-WPAK	20 V	10.4 nC	Surface Mount		30 V	N-Channel	MOSFET (Metal Oxide)	8-WFDFN Exposed Pad	6.5 mOhm	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources