Specification	MBRB30H60CTT4G

Current - Average Rectified (Io) (per Diode)	15 A
Current - Reverse Leakage @ Vr	300 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Speed	200 mA, 500 ns
Supplier Device Package	D2PAK
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	620 mV

MBRB30H30CT-1 Series

Schottky Barrier Rectifier, H-Series, 30 V, 30 A

Part	Technology	Speed	Mounting Type	Diode Configuration	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io) (per Diode)	Supplier Device Package	Current - Reverse Leakage @ Vr
ON Semiconductor MBRB30H30CT-1G	Schottky	200 mA 500 ns	Through Hole	1 Pair Common Cathode	30 V	I2PAK TO-262-3 Long Leads TO-262AA	480 mV	150 °C	-55 °C	15 A	TO-262 (I2PAK)	800 µA
ON Semiconductor MBR30H60CTG	Schottky	200 mA 500 ns	Through Hole	1 Pair Common Cathode	60 V	TO-220-3	620 mV	175 ░C	-55 C	15 A	TO-220	300 µA
ON Semiconductor MBR30H30CTG	Schottky	200 mA 500 ns	Through Hole	1 Pair Common Cathode	30 V	TO-220-3	480 mV	150 °C	-55 °C	15 A	TO-220	800 µA
ON Semiconductor MBRB30H60CTT4G	Schottky	200 mA 500 ns	Surface Mount	1 Pair Common Cathode	60 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	620 mV	175 ░C	-55 C	15 A	D2PAK	300 µA
ON Semiconductor MBRB30H60CT-1H	Schottky	200 mA 500 ns	Through Hole	1 Pair Common Cathode	60 V	I2PAK TO-262-3 Long Leads TO-262AA	620 mV	175 ░C	-55 C	15 A	TO-262 (I2PAK)	300 µA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Enhanced Schottky rectifiers with lower VF, higher surge, and lower IR parameters.