Discrete Semiconductor Products

SISS02DN-T1-GE3

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MOSFET N-CH 25V 51A/80A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 25V 51A/80A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISS02DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	80 A, 51 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	83 nC
Input Capacitance (Ciss) (Max) @ Vds	4450 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8S
Power Dissipation (Max)	5 W, 65.7 W
Rds On (Max) @ Id, Vgs	1.2 mOhm
Supplier Device Package	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	-12 V, 16 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	Supplier Device Package	FET Type
Vishay General Semiconductor - Diodes Division SISS02DN-T1-GE3	MOSFET (Metal Oxide)	51 A 80 A	2.2 V	83 nC	Surface Mount	4.5 V 10 V	PowerPAK® 1212-8S	1.2 mOhm	4450 pF	-55 °C	150 °C	5 W 65.7 W	25 V	-12 V 16 V	PowerPAK® 1212-8S	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 25 V 51A (Ta), 80A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

Technical documentation and resources