SISS02 Series

Catalog

MOSFET N-CH 25V 51A/80A PPAK

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	Supplier Device Package	FET Type
Vishay General Semiconductor - Diodes Division SISS02DN-T1-GE3	MOSFET (Metal Oxide)	51 A 80 A	2.2 V	83 nC	Surface Mount	4.5 V 10 V	PowerPAK® 1212-8S	1.2 mOhm	4450 pF	-55 °C	150 °C	5 W 65.7 W	25 V	-12 V 16 V	PowerPAK® 1212-8S	N-Channel