Discrete Semiconductor Products

NTMS5P02R2G

Active

POWER MOSFET, P CHANNEL, 20 V, 5.4 A, 0.033 OHM, SOIC, SURFACE MOUNT

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

POWER MOSFET, P CHANNEL, 20 V, 5.4 A, 0.033 OHM, SOIC, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	NTMS5P02R2G

Current - Continuous Drain (Id) @ 25°C	3.95 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	35 nC
Input Capacitance (Ciss) (Max) @ Vds	1900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max) [Max]	790 mW
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1.25 V

Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ

Part	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
ON Semiconductor NTMS5P02R2G	MOSFET (Metal Oxide)	35 nC	1.25 V	P-Channel	790 mW	3.95 A	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	2.5 V 4.5 V	33 mOhm	8-SOIC	10 V	Surface Mount	1900 pF	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This is a 20 V P-Channel Power MOSFET.

Technical documentation and resources