NTMS5P02 Series

Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ

Catalog

Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ

Part	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
ON Semiconductor NTMS5P02R2G	MOSFET (Metal Oxide)	35 nC	1.25 V	P-Channel	790 mW	3.95 A	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	2.5 V 4.5 V	33 mOhm	8-SOIC	10 V	Surface Mount	1900 pF	20 V

Single P-Channel Enhancement−Mode Power MOSFET -20V, -5.4A, 33mΩ

• High Density Power MOSFET with Ultra Low RDS(on)Providing Higher Efficiency

• Miniature SO-8 Surface Mount Package--Saves Board Space

• Diode Exhibits High Speed with Soft Recovery

• IDSSSpecified at Elevated Temperature

• Drain-to-Source Avalanche Energy Specified

• Mounting Information for the SOIC-8 Package is Provided

• RoHS Compliant

This is a 20 V P-Channel Power MOSFET.