Discrete Semiconductor Products

TPCC8136.LQ

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MOSFET P-CH 20V 9.4A 8TSON

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Discrete Semiconductor Products

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MOSFET P-CH 20V 9.4A 8TSON

Technical Specifications

Parameters and characteristics for this part

Specification	TPCC8136.LQ

Current - Continuous Drain (Id) @ 25°C	9.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	36 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2350 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	700 mW
Power Dissipation (Max)	18 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	8-TSON Advance (3.1x3.1)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, 0.016 Ω@4.5V, TSON Advance, U-MOSⅥ

Part	Supplier Device Package	FET Type	Mounting Type	Power Dissipation (Max)	Power Dissipation (Max)	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]
Toshiba Semiconductor and Storage TPCC8136.LQ	8-TSON Advance (3.1x3.1)	P-Channel	Surface Mount	700 mW	18 W	MOSFET (Metal Oxide)	12 V	1.8 V	4.5 V	36 nC	9.4 A	16 mOhm	20 V	8-PowerVDFN	150 °C	1.2 V	2350 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, 0.016 Ω@4.5V, TSON Advance, U-MOSⅥ

Technical documentation and resources

No documents available