High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, 0.016 Ω@4.5V, TSON Advance, U-MOSⅥ
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, 0.016 Ω@4.5V, TSON Advance, U-MOSⅥ
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, 0.016 Ω@4.5V, TSON Advance, U-MOSⅥ
| Part | Supplier Device Package | FET Type | Mounting Type | Power Dissipation (Max) | Power Dissipation (Max) | Technology | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Package / Case | Operating Temperature | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 8-TSON Advance (3.1x3.1) | P-Channel | Surface Mount | 700 mW | 18 W | MOSFET (Metal Oxide) | 12 V | 1.8 V | 4.5 V | 36 nC | 9.4 A | 16 mOhm | 20 V | 8-PowerVDFN | 150 °C | 1.2 V | 2350 pF |