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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N3749 |
|---|---|
| Current - Collector (Ic) (Max) | 5 A |
| Current - Collector Cutoff (Max) [Max] | 20 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 40 |
| Mounting Type | Stud Mount |
| Package / Case | TO-111-4, Stud |
| Power - Max [Max] | 2 W |
| Supplier Device Package | TO-111 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic [Max] | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 126.87 | |
| Microchip Direct | N/A | 1 | $ 136.63 | |
| Newark | Each | 100 | $ 126.87 | |
| 500 | $ 121.99 | |||
Description
General part information
2N3749-Transistor Series
This 2N3749 silicon NPN transistor is rated at 5 amps and is military qualified up to the JANS level for high-reliability applications. This transistor is available in a TO-111 isolated package which features a 180 degree lead orientation.
Documents
Technical documentation and resources