Specification	FDB024N04AL7

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	109 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max)	214 W
Rds On (Max) @ Id, Vgs	2.4 mOhm
Supplier Device Package	TO-263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDB024N04AL7 Series

N-Channel PowerTrench® MOSFET 40V, 219A, 2.4mΩ

Part	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
ON Semiconductor FDB024N04AL7	2.4 mOhm	MOSFET (Metal Oxide)	Surface Mount	214 W	-55 °C	175 ░C	10 V	3 V	7300 pF	D2PAK TO-263-7	109 nC	40 V	N-Channel	TO-263-7	100 A	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	105	$ 2.87

Description

General part information

FDB024N04AL7 Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Documents

Technical documentation and resources

Package Drawing-418AY-D2PAK7 (TO-263 7 LD)

Package Drawing