FDB024N04AL7 Series

N-Channel PowerTrench® MOSFET 40V, 219A, 2.4mΩ

Catalog

N-Channel PowerTrench® MOSFET 40V, 219A, 2.4mΩ

Part	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
ON Semiconductor FDB024N04AL7	2.4 mOhm	MOSFET (Metal Oxide)	Surface Mount	214 W	-55 °C	175 ░C	10 V	3 V	7300 pF	D2PAK TO-263-7	109 nC	40 V	N-Channel	TO-263-7	100 A	20 V

Catalog

N-Channel PowerTrench® MOSFET 40V, 219A, 2.4mΩ

Key Features

• RDS(on)= 2.0mΩ ( Typ.)@ VGS= 10V, ID= 80A

• Fast Switching Speed

• Low Gate Charge, QG= 84nC ( Typ.)

• High Performance Trench Technology for Extremely Low RDS(on)

• High Power and Current Handling Capability

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.