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Deep-Dive with AI
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Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MG1020-M16 |
|---|---|
| Current - Max [Max] | 1.6 A |
| Diode Type | PIN - Single |
| Package / Case | Stud |
| Power Dissipation (Max) [Max] | 250 mW |
| Voltage - Peak Reverse (Max) [Max] | 5.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 444.65 | |
| 50 | $ 426.57 | |||
| 100 | $ 401.26 | |||
| 250 | $ 383.20 | |||
| 500 | $ 368.72 | |||
| 1000 | $ 361.50 | |||
Description
General part information
Ka-Band-Gunn Series
GaAs Gunn diodes epi-down are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using propriety techniques resulting in low phase and 1/f noise. Our Gunn diodes are available in a variety of microwave ceramic packages are available for operation from 5.9-95 GHz.
Documents
Technical documentation and resources