TO-92-3(StandardBody),TO-226_straightlead

Discrete Semiconductor Products

VN10KN3-G-P013

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Microchip Technology

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V, 5.0 OHM

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DocumentsDatasheet Understanding MOSFET Data +1

Discrete Semiconductor Products

VN10KN3-G-P013

Active

Microchip Technology

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V, 5.0 OHM

Deep-Dive with AI

DocumentsDatasheet Understanding MOSFET Data +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	VN10KN3-G-P013

Current - Continuous Drain (Id) @ 25°C	310 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	60 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id [Max]	2.5 V

VN10KN3 Series

MOSFET, N-Channel Enhancement-Mode, 60V, 5.0 Ohm

Part	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature [Min]	Operating Temperature [Max]
Microchip Technology VN10KN3-G	60 pF	1 W	5 Ohm	MOSFET (Metal Oxide)	2.5 V	310 mA	30 V	60 V	N-Channel	Through Hole	TO-92-3	TO-226-3 TO-92-3	10 V	5 V	-55 °C	150 °C
Microchip Technology VN10KN3-G-P013	60 pF	1 W	5 Ohm	MOSFET (Metal Oxide)	2.5 V	310 mA	30 V	60 V	N-Channel	Through Hole	TO-92-3	TO-226-3 TO-92-3	10 V	5 V	-55 °C	150 °C
Microchip Technology VN10KN3-G-P003	60 pF	1 W	5 Ohm	MOSFET (Metal Oxide)	2.5 V	310 mA	30 V	60 V	N-Channel	Through Hole	TO-92-3	TO-226-3 TO-92-3	10 V	5 V	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Box (TB)	2000	$ 0.54
Microchip Direct	AMMO	1	$ 0.72
		25	$ 0.59
		100	$ 0.54
		1000	$ 0.45
		5000	$ 0.42
		10000	$ 0.38

Description

General part information

VN10KN3 Series

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Documents

Technical documentation and resources

Datasheet

Understanding MOSFET Data

Application Notes

DMOS Devices for Telecommunications

Application Notes