Discrete Semiconductor Products

SI4896DY-T1-E3

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MOSFET N-CH 80V 6.7A 8SO

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Discrete Semiconductor Products

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MOSFET N-CH 80V 6.7A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4896DY-T1-E3

Current - Continuous Drain (Id) @ 25°C	6.7 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1.56 W
Rds On (Max) @ Id, Vgs	16.5 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Technology	Vgs (Max)	FET Type	Package / Case	Package / Case [y]	Package / Case [x]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SI4896DY-T1-GE3	8-SOIC	41 nC	6 V 10 V	1.56 W	MOSFET (Metal Oxide)	20 V	N-Channel	8-SOIC	3.9 mm	0.154 in	6.7 A	80 V	Surface Mount	16.5 mOhm	-55 °C	150 °C	2 V
Vishay General Semiconductor - Diodes Division SI4896DY-T1-E3	8-SOIC	41 nC	6 V 10 V	1.56 W	MOSFET (Metal Oxide)	20 V	N-Channel	8-SOIC	3.9 mm	0.154 in	6.7 A	80 V	Surface Mount	16.5 mOhm	-55 °C	150 °C	2 V

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General part information

N-Channel 80 V 6.7A (Ta) 1.56W (Ta) Surface Mount 8-SOIC

Technical documentation and resources