SI4896 Series

Catalog

MOSFET N-CH 80V 6.7A 8SO

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Technology	Vgs (Max)	FET Type	Package / Case	Package / Case [y]	Package / Case [x]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SI4896DY-T1-GE3	8-SOIC	41 nC	6 V 10 V	1.56 W	MOSFET (Metal Oxide)	20 V	N-Channel	8-SOIC	3.9 mm	0.154 in	6.7 A	80 V	Surface Mount	16.5 mOhm	-55 °C	150 °C	2 V
Vishay General Semiconductor - Diodes Division SI4896DY-T1-E3	8-SOIC	41 nC	6 V 10 V	1.56 W	MOSFET (Metal Oxide)	20 V	N-Channel	8-SOIC	3.9 mm	0.154 in	6.7 A	80 V	Surface Mount	16.5 mOhm	-55 °C	150 °C	2 V