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Discrete Semiconductor Products

CSD17510Q5A

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Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 5.2 MOHM

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VSONP (DQJ)
Discrete Semiconductor Products

CSD17510Q5A

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 5.2 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD17510Q5A
Current - Continuous Drain (Id) @ 25°C100 A, 20 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]8.3 nC
Input Capacitance (Ciss) (Max) @ Vds1250 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max) [Max]3 W
Rds On (Max) @ Id, Vgs [Max]5.2 mOhm
Supplier Device Package8-VSONP (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.17
10$ 0.95
100$ 0.74
500$ 0.63
1000$ 0.51
Digi-Reel® 1$ 1.17
10$ 0.95
100$ 0.74
500$ 0.63
1000$ 0.51
Tape & Reel (TR) 2500$ 0.48
5000$ 0.46
12500$ 0.44
Texas InstrumentsLARGE T&R 1$ 0.86
100$ 0.67
250$ 0.49
1000$ 0.35

Description

General part information

CSD17510Q5A Series

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.