CSD17510Q5A Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.2 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.2 mOhm

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
Texas Instruments CSD17510Q5A	1250 pF	20 V	5.2 mOhm	8.3 nC	30 V	3 W	Surface Mount	8-PowerTDFN	4.5 V 10 V	N-Channel	MOSFET (Metal Oxide)	8-VSONP (5x6)	20 A 100 A	-55 °C	150 °C	2.1 V

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.2 mOhm

Key Features

• Ultralow Qg and QgdLow thermal resistanceAvalanche ratedPb free terminal platingRoHS compliantHalogen FreeSON 5mm × 6mm plastic packageUltralow Qg and QgdLow thermal resistanceAvalanche ratedPb free terminal platingRoHS compliantHalogen FreeSON 5mm × 6mm plastic package

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.