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Technical Specifications
Parameters and characteristics for this part
| Specification | RF4E110BNTR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 24 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerUDFN |
| Power Dissipation (Max) | 2 W |
| Rds On (Max) @ Id, Vgs | 11.1 mOhm |
| Supplier Device Package | HUML2020L8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.07 | |
| 10 | $ 0.67 | |||
| 100 | $ 0.44 | |||
| 500 | $ 0.34 | |||
| 1000 | $ 0.31 | |||
| Digi-Reel® | 1 | $ 0.66 | ||
| 10 | $ 0.57 | |||
| 100 | $ 0.40 | |||
| 500 | $ 0.33 | |||
| 1000 | $ 0.28 | |||
| N/A | 648 | $ 1.06 | ||
| Tape & Reel (TR) | 3000 | $ 0.22 | ||
Description
General part information
RF4E110 Series
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Documents
Technical documentation and resources
