RF4E110GNTR
ActivePOWER FIELD-EFFECT TRANSISTOR, 11A I(D), 30V, 0.0153OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, HALOGEN FREE AND ROHS COMPLIANT, HUML2020L8, 6 PIN
Deep-Dive with AI
Search across all available documentation for this part.
RF4E110GNTR
ActivePOWER FIELD-EFFECT TRANSISTOR, 11A I(D), 30V, 0.0153OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, HALOGEN FREE AND ROHS COMPLIANT, HUML2020L8, 6 PIN
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RF4E110GNTR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 504 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerUDFN |
| Power Dissipation (Max) [Max] | 2 W |
| Rds On (Max) @ Id, Vgs | 11.3 mOhm |
| Supplier Device Package | HUML2020L8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RF4E110GN Series
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Documents
Technical documentation and resources
