Discrete Semiconductor Products

NJVMJD32CT4G-VF01

Obsolete

ON Semiconductor

TRANS PNP 100V 3A DPAK

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Discrete Semiconductor Products

NJVMJD32CT4G-VF01

Obsolete

ON Semiconductor

TRANS PNP 100V 3A DPAK

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NJVMJD32CT4G-VF01

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	20 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	10 hFE
Frequency - Transition	3 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	1.56 W
Supplier Device Package	DPAK
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

NJVMJD32 Series

3.0 A, 100 V PNP Bipolar Power Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Frequency - Transition	Operating Temperature [Max]	Operating Temperature [Min]	Transistor Type	Package / Case	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Grade	Qualification
ON Semiconductor MJD32CG	10 hFE	DPAK	50 µA	3 A	1.56 W	3 MHz	150 °C	-65 °C	PNP	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.2 V	100 V	Surface Mount
ON Semiconductor MJD32CRLG	10 hFE	DPAK	50 µA	3 A	1.56 W	3 MHz	150 °C	-65 °C	PNP	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.2 V	100 V	Surface Mount
ON Semiconductor MJD32CT4G	10 hFE	DPAK	50 µA	3 A	1.56 W	3 MHz	150 °C	-65 °C	PNP	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.2 V	100 V	Surface Mount
ON Semiconductor MJD32CRL	10 hFE	DPAK	50 µA	3 A	1.56 W	3 MHz	150 °C	-65 °C	PNP	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.2 V	100 V	Surface Mount
ON Semiconductor NJVMJD32CT4G-VF01	10 hFE	DPAK	20 µA	3 A	1.56 W	3 MHz	150 °C	-65 °C	PNP	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.2 V	100 V	Surface Mount
ON Semiconductor NJVMJD32CT4G		DPAK	50 µA	3 A	1.56 W	3 MHz	150 °C	-65 °C	PNP	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.2 V	100 V	Surface Mount	25 hFE	Automotive	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NJVMJD32 Series

The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD31, MJD31C (NPN); and MJD32, MJD32C (PNP) are complementary devices.

Documents

Technical documentation and resources