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NJVMJD32CG
Discrete Semiconductor Products

MJD32CT4G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, PNP, 100 V, 3 A, 1.56 W, TO-252 (DPAK)

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NJVMJD32CG
Discrete Semiconductor Products

MJD32CT4G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, PNP, 100 V, 3 A, 1.56 W, TO-252 (DPAK)

Technical Specifications

Parameters and characteristics for this part

SpecificationMJD32CT4G
Current - Collector (Ic) (Max) [Max]3 A
Current - Collector Cutoff (Max) [Max]50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce10 hFE
Frequency - Transition3 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]1.56 W
Supplier Device PackageDPAK
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.99
10$ 0.62
100$ 0.40
500$ 0.31
1000$ 0.28
Digi-Reel® 1$ 0.99
10$ 0.62
100$ 0.40
500$ 0.31
1000$ 0.28
Tape & Reel (TR) 2500$ 0.25
5000$ 0.23
7500$ 0.22
12500$ 0.21
17500$ 0.20
25000$ 0.20
NewarkEach (Supplied on Cut Tape) 1000$ 0.29
ON SemiconductorN/A 1$ 0.21

Description

General part information

NJVMJD32 Series

The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD31, MJD31C (NPN); and MJD32, MJD32C (PNP) are complementary devices.