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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC930A |
|---|---|
| Current - Supply | 175 mA |
| Frequency [Max] | 40 GHz |
| Frequency [Min] | 0 Hz |
| Gain | 13.5 dB |
| Mounting Type | Surface Mount |
| Noise Figure | 4.5 dB |
| P1dB | 23 dBm |
| Package / Case | Die |
| Supplier Device Package | Die |
| Voltage - Supply | 10 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
HMC930A-DIE Series
The HMC930A is a gallium arsenide (GaAs), pseudomorphic, high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from dc to 40 GHz. The HMC930A provides 13 dB of gain, 33.5 dBm output IP3, and 22 dBm of output power at 1 dB gain compression, requiring 175 mA from a 10 V supply. The HMC930A exhibits a slightly positive gain slope from 8 GHz to 32 GHz, making it ideal for electronic warfare (EW), electronic countermeasures (ECM), radar, and test equipment applications. The HMC930A amplifier inputs/outputs (I/Os) are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length at 0.31 mm (12 mils).ApplicationsTest instrumentationMicrowave radios and VSATsMilitary and spaceTelecommunications infrastructureFiber optics
Documents
Technical documentation and resources