Specification	CSD19533KCS

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2670 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	188 W
Rds On (Max) @ Id, Vgs	10.5 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.4 V

CSD19533KCS Series

100-V, N channel NexFET™ power MOSFET, single TO-220, 10.5 mOhm

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case
Texas Instruments CSD19533KCS	Through Hole	2670 pF	10.5 mOhm	35 nC	TO-220-3	3.4 V	N-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	188 W	100 V	6 V 10 V	100 A	20 V	TO-220-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 100V, 8.7mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Technical documentation and resources