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TO-92-3 Formed Leads
Discrete Semiconductor Products

FJN3301RTA

Obsolete
ON Semiconductor

EPITAXIAL SILICON TRANSISTOR

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TO-92-3 Formed Leads
Discrete Semiconductor Products

FJN3301RTA

Obsolete
ON Semiconductor

EPITAXIAL SILICON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationFJN3301RTA
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]20
Frequency - Transition250 MHz
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-226-3, TO-92-3
Supplier Device PackageTO-92-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 11539$ 0.03

Description

General part information

FJN3301R Series

Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.