Discrete Semiconductor Products

FJN3306RTA

Obsolete

TRANS PREBIAS NPN 50V TO92-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS PREBIAS NPN 50V TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	FJN3306RTA

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	68
Frequency - Transition	250 MHz
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3
Resistor - Base (R1)	10 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Resistors Included	R1 and R2
Supplier Device Package	TO-92-3
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

NPN Epitaxial Silicon Transistor with Bias Resistor

Part	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Mounting Type	Package / Case	Vce Saturation (Max) @ Ib, Ic	Resistor - Emitter Base (R2)	Resistor - Base (R1)	DC Current Gain (hFE) (Min) @ Ic, Vce	Resistors Included	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor FJN3301RTA	150 °C	20	100 nA	NPN	100 mA	250 MHz	50 V	TO-92-3	Through Hole	TO-226-3 TO-92-3	300 mV
ON Semiconductor FJN3303RBU		56 hFE	100 nA	NPN - Pre-Biased	100 mA	250 MHz	50 V	TO-92-3	Through Hole	TO-226-3 TO-92-3	300 mV	22 kOhms	22 kOhms
ON Semiconductor FJN3305RBU			100 nA	NPN - Pre-Biased	100 mA	250 MHz	50 V	TO-92-3	Through Hole	TO-226-3 TO-92-3	300 mV	10 kOhms	4.7 kOhms	30 hFE
ON Semiconductor FJN3306RTA		68	100 nA	NPN - Pre-Biased	100 mA	250 MHz	50 V	TO-92-3	Through Hole	TO-226-3 TO-92-3	300 mV	47000 Ohms	10 kOhms		R1 and R2
ON Semiconductor FJN3302RTA			100 nA	NPN - Pre-Biased	100 mA	250 MHz	50 V	TO-92-3	Through Hole	TO-226-3 TO-92-3	300 mV	10 kOhms	10 kOhms	30 hFE
ON Semiconductor FJN3302RBU			100 nA	NPN - Pre-Biased	100 mA	250 MHz	50 V	TO-92-3	Through Hole	TO-226-3 TO-92-3	300 mV	10 kOhms	10 kOhms	30 hFE
ON Semiconductor FJN3303FBU	150 °C	14	10 µA	NPN	1.5 A	4 MHz		TO-92-3	Through Hole	TO-226-3 TO-92-3	3 V					650 mW	400 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.

Technical documentation and resources

No documents available