1N5619US
ActiveUFR,FRR A-BODY SQ. MELF ROHS COMPLIANT: YES
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1N5619US
ActiveUFR,FRR A-BODY SQ. MELF ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | 1N5619US |
|---|---|
| Capacitance @ Vr, F | 25 pF |
| Current - Average Rectified (Io) | 1 A |
| Current - Reverse Leakage @ Vr | 500 nA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -65 C |
| Reverse Recovery Time (trr) | 250 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | D-5A |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V |
Pricing
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Description
General part information
JANTXV1N5619-Rectifier Series
This "fast recovery" rectifier diode series is military qualified to MIL-PRF-19500/429 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal "Category I" metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a "US" suffix (see separate data sheet for 1N5615US thru 1N5623US). Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.
Documents
Technical documentation and resources
