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Discrete Semiconductor Products

FSB660

Obsolete
ON Semiconductor

60V 500MW 100@500MA,2V 2A PNP SOT-23-3 BIPOLAR (BJT) ROHS

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Product Image
Discrete Semiconductor Products

FSB660

Obsolete
ON Semiconductor

60V 500MW 100@500MA,2V 2A PNP SOT-23-3 BIPOLAR (BJT) ROHS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFSB660
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition75 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]500 mW
Supplier Device PackageSOT-23-3
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic350 mV
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 2959$ 0.10
2959$ 0.10
LCSCN/A 1$ 0.00

Description

General part information

FSB660A Series

These devices are designed with high current gain and low saturation voltage with collector currents up to 2 A continuous.

Documents

Technical documentation and resources

No documents available