
Discrete Semiconductor Products
FSB660
ObsoleteON Semiconductor
60V 500MW 100@500MA,2V 2A PNP SOT-23-3 BIPOLAR (BJT) ROHS
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Discrete Semiconductor Products
FSB660
ObsoleteON Semiconductor
60V 500MW 100@500MA,2V 2A PNP SOT-23-3 BIPOLAR (BJT) ROHS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FSB660 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 |
| Frequency - Transition | 75 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 500 mW |
| Supplier Device Package | SOT-23-3 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 350 mV |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
FSB660A Series
These devices are designed with high current gain and low saturation voltage with collector currents up to 2 A continuous.
Documents
Technical documentation and resources
No documents available