Discrete Semiconductor Products

FSB660A

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BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 60 V, 2 A, 500 MW, SOT-23, SURFACE MOUNT

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Discrete Semiconductor Products

Active

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 60 V, 2 A, 500 MW, SOT-23, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	FSB660A

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	250
Frequency - Transition	75 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	500 mW
Supplier Device Package	SOT-23-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

PNP Low Saturation Transistor

Part	Transistor Type	Operating Temperature [Min]	Operating Temperature [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Frequency - Transition	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Mounting Type
ON Semiconductor FSB660A	PNP	-55 °C	150 °C	250	2 A	300 mV	SC-59 SOT-23-3 TO-236-3	100 nA	SOT-23-3	75 MHz	500 mW	60 V	Surface Mount
ON Semiconductor FSB660	PNP	-55 °C	150 °C	100	2 A	350 mV	SC-59 SOT-23-3 TO-236-3	100 nA	SOT-23-3	75 MHz	500 mW	60 V	Surface Mount
ON Semiconductor FSB660	PNP	-55 °C	150 °C	100	2 A	350 mV	SC-59 SOT-23-3 TO-236-3	100 nA	SOT-23-3	75 MHz	500 mW	60 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

These devices are designed with high current gain and low saturation voltage with collector currents up to 2 A continuous.

Technical documentation and resources