STP5NK100Z
ActiveN-CHANNEL 1000 V, 2.7 OHM TYP., 3.5 A SUPERMESH POWER MOSFET IN A TO-220 PACKAGE
STP5NK100Z
ActiveN-CHANNEL 1000 V, 2.7 OHM TYP., 3.5 A SUPERMESH POWER MOSFET IN A TO-220 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STP5NK100Z |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.5 A |
| Drain to Source Voltage (Vdss) | 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1154 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 125 W |
| Rds On (Max) @ Id, Vgs | 3.7 Ohm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 2691 | $ 2.82 | |
Description
General part information
STP5NK100Z Series
The new SuperMESH series of Power MOSFETS is the result of further design improvements on ST's well-established stripbased PowerMESH layout. In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH devices further complement an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh products.
Documents
Technical documentation and resources